Crystal growth technology of binary and ternary II-VI semiconductors for photonic applications

Journal of Crystal Growth

Volumn 310, Issue 6, 2008, Pages 1099-1106

  Trivedi, Sudhir B ^a   Wang, Chen Chia ^a   Kutcher, Susan ^a   Hommerich, Uwe ^b   Palosz, Witold ^a  

^a BRIMROSE CORPORATION OF AMERICA   (United States)

^b HAMPTON UNIVERSITY   (United States)

Author keywords

A2. Bridgman technique; A2. Growth from melt; A2. Growth from vapor; B2. Semiconducting II VI materials; B3. Infrared devices; B3. Solid state lasers

Indexed keywords

ELECTROMAGNETIC WAVES; EPITAXIAL GROWTH; INFRARED DEVICES; PHOTONICS; SOLID STATE LASERS; TERNARY SYSTEMS;

BRIDGMAN TECHNIQUES; GROWTH FROM MELT; GROWTH FROM VAPOR;

SEMICONDUCTOR MATERIALS;

EID: 39649104328     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.12.032     Document Type: Article

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