Quantum well thickness dependence of spin orbit interaction in gated InP/In0.8Ga0.2As/In0.52Al0.48As asymmetric quantum wells

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 40, Issue 5, 2008, Pages 1194-1196

  Kohda, Makoto ^a,b   Nihei, Takayuki ^a   Nitta, Junsaku ^a,b  

^a TOHOKU UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

Field contribution; Interface contribution; Rashba spin orbit interaction; Weak antilocalization

Indexed keywords

ARSENIC COMPOUNDS; BIAS CURRENTS; ELECTRONS; GATE DIELECTRICS; PARAMETER ESTIMATION; SEMICONDUCTING GALLIUM;

ASYMMETRIC QUANTUM WELLS; FIELD CONTRIBUTION; INTERFACE CONTRIBUTION; QUANTUM WELL THICKNESS; RASHBA SPIN ORBIT INTERACTION; WEAK ANTILOCALIZATION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 39649097160     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2007.08.088     Document Type: Article

References (7)

1. Datta S., and Das B. Appl. Phys. Lett. 56 (1990) 665
2. Kato Y.K., Myers R.C., Gossard A.C., and Awschalom D.D. Phys. Rev. Lett. 97 (2004) 176601
3. Kato Y.K., Myers R.C., Gossard A.C., and Awschalom D.D. Science 306 (2004) 1910
4. Nitta J., Akazaki T., Takayanagi H., and Enoki T. Phys. Rev. Lett. 78 (1997) 1335
5. Engels G., Lange J., Schäpers Th., and Lüth H. Phys. Rev. B 55 (1997) R1958
6. Iordanskii S.V., Lyanda-Geller Y.B., and Pikus G.E. JETP Lett. 60 (1994) 206
7. Schäpers Th., Engels G., Lange J., Klocke Th., Hollfelder M., and Lüth H. J. Appl. Phys. 83 (1998) 4324