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Volumn 2007, Issue , 2007, Pages 251-254

A new fabrication method for multi-layer stacked devices using wafer-to-wafer stacked technology based on 8-inch wafers

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC CONDUCTIVITY; ELECTRIC RESISTANCE; INTERCONNECTION NETWORKS;

EID: 39549113452     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2007.4430925     Document Type: Conference Paper
Times cited : (7)

References (6)
  • 1
    • 39749162082 scopus 로고    scopus 로고
    • Where CMOS is Going: Trendy Hype vs. Real Technology
    • Feb
    • T. C. Chen, "Where CMOS is Going: Trendy Hype vs. Real Technology" ISSCC Dig. Tech. Papers, Feb. 2006, pp22-28.
    • (2006) ISSCC Dig. Tech. Papers , pp. 22-28
    • Chen, T.C.1
  • 2
    • 33748523898 scopus 로고    scopus 로고
    • Enabling SOI-based Assembly Technology for Three-dimensional (3D) Integrated Circuits
    • Dec
    • A. W. Topol, et al., "Enabling SOI-based Assembly Technology for Three-dimensional (3D) Integrated Circuits," IEEE Int. Electron Devices meeting Conf. Dig. Tech. Papers, Dec. 2005, pp363-366.
    • (2005) IEEE Int. Electron Devices meeting Conf. Dig. Tech. Papers , pp. 363-366
    • Topol, A.W.1
  • 3
    • 33646236322 scopus 로고    scopus 로고
    • Three-Dimensional Wafer Stacking Via Cu-Cu Bonding Integrated With 65-nm Strained-Si/Low-kCMOS Technology
    • May
    • P.R.Morrow,et al., "Three-Dimensional Wafer Stacking Via Cu-Cu Bonding Integrated With 65-nm Strained-Si/Low-kCMOS Technology," IEEE Electron Device Letters, Vol. 27, No.5, pp335-337, May 2006
    • (2006) IEEE Electron Device Letters , vol.27 , Issue.5 , pp. 335-337
    • Morrow, P.R.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.