Electrical properties of metal-diamond-like-nanocomposite (Me-DLN) contacts to 6H SiC

Journal of Electronic Materials

Volumn 26, Issue 3, 1997, Pages 193-197

  Schoen, K J ^a   Woodall, J M ^a   Goel, A ^b   Venkatraman, C ^b  

^a PURDUE UNIVERSITY   (United States)

^b Advanced Refractory Technologies Inc   (United States)

Author keywords

High temperature contacts; Metal diamond like nanocomposite; Schottky barrier contacts; Silicon carbide; Tungsten

Indexed keywords

EID: 3943096635     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-997-0149-x     Document Type: Article

References (18)

1. W. Xie, Y. Wang, M.R. Melloch, J.A. Cooper, Jr., G.M. Johnson, L.A. Lipkin, J.W. Palmour and C.H. Carter, Jr., Silicon Carbide and Related Materials 1995, Proc. Sixth Intl. Conf., (1995), p. 785.
2. S.T Sheppard, M.R. Melloch and J.A. Cooper Jr., IEEE Electron Dev. Lett. 17 (1), 4 (1996).
3. D.B. Slater, Jr., G.M. Johnson, L.A. Lipkin, A.V. Suvorov and J.W. Palmour, Third Intl. High Temperature Electronics Conf. (HiTEC), (1996).
4. N. Ramungul, T.P. Chow, M. Ghezzo, J. Kretchmer and W. Hennessy, IEEE Device Research Conf., (1996).
5. R.C. Clarke, A.K. Agarwal, R.R. Siergiej, C.D. Brandt and A.W. Morse, IEEE Device Research Conf., (1996).
6. J.W. Palmour, R. Singh, L.A. Lipkin and D.G. Waltz, Third International High Temperature Electronics Conf. (HiTEC), (1996).
7. J.N. Shenoy, M.R. Melloch and J.A. Cooper, Jr., IEEE Device Research Conf., (1996).
8. O. Kordina, J.P. Bergman, A. Henry, E. Janzén, S. Savage, J. Andre, L.P. Ramberg, U. Lindefelt, W. Hermansson and K. Bergman, Appl. Phys. Lett. 67, 1561 (1995).
9. A. Itoh, T. Kimoto and H. Matsunami, IEEE Electron Dev. Lett. 17 (3), 139 (1996).
10. P.G. Neudeck and D.J. Larkin, 1994 NASA Lewis Research & Technology Report.
11. V.F. Dorfman, A. Bozhko, B.N. Pypkin, R.T. Borra, A.R. Srivatsa, H. Zhang, T.A. Skotheim, I. Khan, D. Rodichev and G. Kirpilenko, Thin Solid Films 212, 274 (1992).
12. D.J. Bray, A. Goel and M.T. Spohn, Advanced Materials and Processes December, 31 (1994).
13. F.H. Pollak, personal communication.
14. A. Itoh, O. Takemura, T. Kimoto and H. Matsunami, Silicon Carbide and Related Materials 1995, Pro. Sixth Intl. Conf. (1995), p. 685.
15. N. Lundberg, P. Tägström, U. Jansson and M. Östling, Silicon Carbide and Related Materials 1995, Proc. Sixth Intl. Conf., (1995), p. 677.
16. J.L. Freeouf, T.N. Jackson, S.E. Laux and J.M. Woodall, J. Vac. Sci. Technol. 21 (2), 570 (1982).
17. S.M. Sze, Physics of Semiconductor Devices, (New York: John Wiley & Sons).
18. J. Crofton, private communication.