Slow transients in polyimide-passivated InP-InGaAs HBTs: Effects of UV irradiation, thermal annealing and electrical stress

IEEE Transactions on Electron Devices

Volumn 51, Issue 8, 2004, Pages 1353-1356

  Ng, Chai Wah ^a   Wang, Hong ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; ELECTRIC CURRENTS; ELECTRON TRAPS; IRRADIATION; PASSIVATION; POLYIMIDES; RAPID THERMAL ANNEALING; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; THERMAL EFFECTS;

CHARGE CARRIER PROCESS; CURRENT TRANSIENT; INTERFACE TRAP; THERMAL ANNEALING EFFECTS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 3943069762     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2004.832866     Document Type: Article

References (11)

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