A novel monitoring method of RF characteristics variations for Sub-0.1μm MOSFETs with precise gate-resistance model

Proceedings of the Custom Integrated Circuits Conference

Volumn , Issue , 2006, Pages 725-728

  Tanabe, Akira ^a   Hijioka, KeN'Ichiro ^a   Hayashi, Yoshihiro ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC RESISTANCE; GATE DIELECTRICS; PARAMETER ESTIMATION; POLYSILICON; SILICIDES;

GATE RESISTANCE MODEL; NOVEL MONITORING;

MOSFET DEVICES;

EID: 39049131159     PISSN: 08865930     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/CICC.2006.320925     Document Type: Conference Paper

References (6)

1. A.Tanaka et.al., ISSCC Tech Dig., p120, 2006.
2. A.Litwin, IEEE Trans. ED, Vol.48, No. 9, p2179, Sep. 2001.
3. L.F. Tiemeijer et.al., IEDM Tech. Dig., p441, 2004.
4. X.Jin et.al., IEDM Tech. Dig., p961, 1998.
5. Y.Cheng et.al., IEEE ED Letters, Vol.22, No.2, p98, Feb. 2001.
6. K. Terada et.al., Jap. J. Appl. Phys., 18(5), p.953, 1979.