Field effect transistor on hetero-structure GaN/InxGa 1-xN

Canadian Conference on Electrical and Computer Engineering

Volumn , Issue , 2006, Pages 537-540

  Alexandrov, Dimiter ^a   Dimitrrova, Rozalina ^a   Butcher, K Scott ^b   Wintrebert Fouquet, Marie ^b   Perks, Richard ^c  

^a LAKEHEAD UNIVERSITY   (Canada)

^b MACQUARIE UNIVERSITY   (Australia)

^c CARDIFF UNIVERSITY   (United Kingdom)

Author keywords

Excitons; Field effect transistor

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC POTENTIAL; MODULATION; MOS CAPACITORS; SEMICONDUCTING GALLIUM COMPOUNDS;

CHANNEL CONDUCTIVITY; FET STRUCTURE; GATE WIDTH;

FIELD EFFECT TRANSISTORS;

EID: 39049089396     PISSN: 08407789     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/CCECE.2006.277693     Document Type: Conference Paper

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