Effect of Mg doping on ferroelectric PST thin films for high tunable devices

Materials Chemistry and Physics

Volumn 108, Issue 2-3, 2008, Pages 417-420

  Li, X T ^a,b   Huo, W L ^a   Mak, C L ^b   Sui, S ^a   Weng, W J ^a   Han, G R ^a   Shen, G ^a   Du, P Y ^a  

^a ZHEJIANG UNIVERSITY   (China)

^b HONG KONG POLYTECHNIC UNIVERSITY   (Hong Kong)

Author keywords

Dielectric properties; Sol gel growth; Thin films

Indexed keywords

DOPING (ADDITIVES); LEAD COMPOUNDS; MAGNESIUM; PERMITTIVITY; POLYCRYSTALLINE MATERIALS; SOL-GEL PROCESS;

HEAT TREATMENT TEMPERATURE; LATTICE DISTORTION; TUNABLE DEVICES;

FERROELECTRIC THIN FILMS;

EID: 38949217035     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matchemphys.2007.10.018     Document Type: Article

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