Doped contacts for high-longevity optically activated, high-gain GaAs photoconductive semiconductor switches

IEEE Transactions on Plasma Science

Volumn 28, Issue 5, 2000, Pages 1507-1511

  Mar, Alan ^a   Loubriel, Guillermo M ^a   Zutavern, Fred J ^a   O'Malley, Martin W ^a   Helgeson, Wesley D ^a   Brown, Darwin J ^a   Hjalmarson, Harold P ^a   Baca, Albert G ^a   Thornton, R L ^b   Donaldson, R D ^b  

^a SANDIA NATIONAL LABORATORIES   (United States)

^b PALO ALTO RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTRIC CURRENTS; EPITAXIAL GROWTH; GOLD; MIM DEVICES; OHMIC CONTACTS; PHOTOCONDUCTIVITY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; SOLDERING;

DOPANT DIFFUSION; LIFETIME; PHOTOCONDUCTIVE SEMICONDUCTOR SWITCHES; PHOTOCONDUCTIVE SWITCH; RIBBON WIREBONDING;

SEMICONDUCTOR SWITCHES;

EID: 0034290018     PISSN: 00933813     EISSN: None     Source Type: Journal    
DOI: 10.1109/27.901223     Document Type: Article

References (5)