Optimization of electroluminescent diodes based on pm-SiC:H deposited at low temperature

Materials Science and Engineering: B

Volumn 147, Issue 2-3, 2008, Pages 245-248

  Stenger, I ^a   Nguyen Tran, Th ^a   Abramov, A ^a   Barthou, C ^b   Roca i Cabarrocas, P ^a  

^a LABORATOIRE DE PHYSIQUE DES INTERFACES ET DES COUCHES MINCES   (France)

^b INSTITUT DES NANOSCIENCES DE PARIS   (France)

Author keywords

Electroluminescent diode; nc Si electroluminescence; Polymorphous SiC; Silicon nanocrystal

Indexed keywords

DECOMPOSITION; ELECTROLUMINESCENCE; LUMINESCENT DEVICES; NANOCRYSTALS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON CARBIDE;

ELECTROLUMINESCENT DIODES; POLYMORPHOUS SILICON; POLYMORPHOUS SILICON CARBON THIN FILMS; SILICON NANOCRYSTALS;

SEMICONDUCTOR DIODES;

EID: 38749097788     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2007.08.003     Document Type: Article

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