The effects of annealing and discharging on the characteristics of MgO thin films prepared by ion beam-assisted deposition as a protective layer of AC-PDP

Plasma Science and Technology

Volumn 9, Issue 3, 2007, Pages 284-287

  Yu, Zhinong ^a   Xue, Wei ^a   Zheng, Dexiu ^b   Sun, Jian ^b  

^a BEIJING INSTITUTE OF TECHNOLOGY   (China)

^b XI'AN JIAOTONG UNIVERSITY   (China)

Author keywords

Annealing; Discharging; Ion beam assisted deposition; MgO thin film

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; ION BEAM ASSISTED DEPOSITION; MAGNESIUM COMPOUNDS; THERMAL EFFECTS;

MGO FILMS; PROTECTIVE LAYERS;

THIN FILMS;

EID: 38749083113     PISSN: 10090630     EISSN: None     Source Type: Journal    
DOI: 10.1088/1009-0630/9/3/07     Document Type: Article

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