Linearity of the photocurrent response with light intensity for silicon PIN photodiode array

IEEE Nuclear Science Symposium Conference Record

Volumn 2, Issue , 2006, Pages 1060-1063

  Tabbert, Bernd ^b   Goushcha, Alexander O ^a,b  

^a IEEE

^b Semicoa   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

LEAKAGE CURRENTS; LIGHT AMPLIFIERS; MEDICAL IMAGING; PHOTODIODES; QUANTUM EFFICIENCY;

ARRAY PIXELS; PHOTORESPONSE LINEARITY; RADIATION FLUX;

PHOTOCURRENTS;

EID: 38649139145     PISSN: 10957863     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/NSSMIC.2006.356029     Document Type: Conference Paper

References (3)

1. I. Goushcha, B. Tabbert, and A.O Goushcha, "Silicon PIN photodiode array for medical imaging applications: Structure, optical properties and temperature coefficients", 2005 IEEE Nuclear Science Symposium Conference Record, October 23-29, 2005, Puerto Rico.
2. R.A. Metzler, A.O. Goushcha, C. Hicks, and E. Bartley, "Ultra-thin, two dimensional, multi-element Si pin photodiode array for multipurpose applications". In: Semiconductor Photodetectors 2004, Proceedings of SPIE, 5353 (SPIE Bellingham, WA, 2004), 117-125.
3. Tabbert, B., Hicks, C., Bartley, E., Wu, H., Goushcha, I., Metzler, R.A., and Goushcha, A.O. "The structure and physical properties of ultra-thin, multi-element Si pin photodiode arrays for medical imaging applications". In: Medical Imaging 2005: Physics of Medical Imaging, Proceedings of SPIE, Vol. 5745 (SPIE Bellingham, WA, 2005), pp. 1146-1154.