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Volumn 5353, Issue , 2004, Pages 117-125

Ultra-thin, two dimensional, multi-element Si pin photodiode array for multipurpose applications

Author keywords

Crosstalk; Fast time response; Pin photodiode array; Quantum efficiency; Silicon photodiode

Indexed keywords

FAST TIME RESPONSE; MULTI-ELEMENT PHOTODIODE ARRAYS; PIN PHOTODIODE ARRAY; SILICON PHOTODIODE;

EID: 3543097464     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.528371     Document Type: Conference Paper
Times cited : (10)

References (18)
  • 1
    • 0001323203 scopus 로고    scopus 로고
    • Development of low noise, back-side illuminated silicon photodiode arrays
    • S.E. Holland, N.W. Wang, W.W. Moses, "Development of low noise, back-side illuminated silicon photodiode arrays, IEEE TRANS NUC SCI, 44, 443-447, 1997.
    • (1997) IEEE TRANS NUC SCI , vol.44 , pp. 443-447
    • Holland, S.E.1    Wang, N.W.2    Moses, W.W.3
  • 2
    • 0031142144 scopus 로고    scopus 로고
    • Backside-Illuminated Silicon Photodiode Array for an Integrated Spectrometer
    • T. A. Kwa, P. M. Sarro, and R. F. Wolffenbuttel, "Backside- Illuminated Silicon Photodiode Array for an Integrated Spectrometer",IEEE TRANS NUC SCI, 44, 761-765, 1997.
    • (1997) IEEE TRANS NUC SCI , vol.44 , pp. 761-765
    • Kwa, T.A.1    Sarro, P.M.2    Wolffenbuttel, R.F.3
  • 8
    • 0042377120 scopus 로고    scopus 로고
    • Back-illuminated photodiodes for multislice CT
    • 15-20 February San Diego, California, USA
    • R.P. Luhta, R.A.Mattson, N. Taneja, P. Bui, R. Vasbo, "Back-illuminated photodiodes for multislice CT". SPIE Proceedings, 15-20 February 2003, San Diego, California, USA.
    • (2003) SPIE Proceedings
    • Luhta, R.P.1    Mattson, R.A.2    Taneja, N.3    Bui, P.4    Vasbo, R.5
  • 9
    • 84862397152 scopus 로고    scopus 로고
    • United States Patent No. 6,426,991 B1, "Back-illuminated photodiodes for computed tomography detectors:, Koninklijke Phillips Electronics, N.V., Eindhoven (NL), Jul. 30
    • United States Patent No. 6,426,991 B1, Mattson et al., "Back-illuminated photodiodes for computed tomography detectors:, Koninklijke Phillips Electronics, N.V., Eindhoven (NL), Jul. 30, 2002.
    • (2002)
    • Mattson1
  • 12
    • 84944485155 scopus 로고
    • The theory of p/n junction in semiconductors and p/n junction transistors
    • W. Shockley, "The theory of p/n junction in semiconductors and p/n junction transistors", Bell Syst Tech J, 28, 435-489, 1949.
    • (1949) Bell Syst Tech J , vol.28 , pp. 435-489
    • Shockley, W.1
  • 13
    • 0017481527 scopus 로고
    • A mathematical study of space-charge layer capacitance for an ubrupt p-n semiconductor junction
    • D.P Kennedy, "A mathematical study of space-charge layer capacitance for an ubrupt p-n semiconductor junction", Solid-State Electronics, 20, 311-319, 1977.
    • (1977) Solid-State Electronics , vol.20 , pp. 311-319
    • Kennedy, D.P.1
  • 14
    • 0343109980 scopus 로고
    • Quasistatic capacitance of p/n junction space-charge layers by the Leibnitz rule
    • F.A. Lindholm and J.J. Liou, "Quasistatic capacitance of p/n junction space-charge layers by the Leibnitz rule", J. Appl. Phys., 63, 561-564, 1988.
    • (1988) J. Appl. Phys. , vol.63 , pp. 561-564
    • Lindholm, F.A.1    Liou, J.J.2
  • 17
    • 0343109986 scopus 로고
    • Thickness of p/n junction space-charge layers
    • J.J. Liou and P.A. Lindholm, "Thickness of p/n junction space-charge layers," J.Appl.Phys., 64, 1249-1253, 1988.
    • (1988) J.Appl.Phys. , vol.64 , pp. 1249-1253
    • Liou, J.J.1    Lindholm, P.A.2
  • 18
    • 0029309695 scopus 로고
    • Capacitance of abrupt heterojunctions with inversion layers
    • M. Schmeits and M. Sakhaf, "Capacitance of abrupt heterojunctions with inversion layers", Solid-State Electronics, 38, 1001-1007, 1995.
    • (1995) Solid-State Electronics , vol.38 , pp. 1001-1007
    • Schmeits, M.1    Sakhaf, M.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.