Formation of Zn-doped CuInSe2 films by thermal annealing using dimethylzinc

Journal of Crystal Growth

Volumn 310, Issue 4, 2008, Pages 794-797

  Sugiyama, M ^a   Kinoshita, A ^a   Miyama, A ^a   Nakanishi, H ^a   Chichibu, S F ^b  

^a TOKYO UNIVERSITY OF SCIENCE   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

A1. Growth models; A3. Physical vapor deposition processes; B2. Semiconducting ternary compounds

Indexed keywords

DIODES; PHOTOLUMINESCENCE; PHYSICAL VAPOR DEPOSITION; SEMICONDUCTOR MATERIALS; THERMAL DIFFUSION; THERMODYNAMIC PROPERTIES; ZINC COMPOUNDS;

PHOTOLUMINESCENCE SPECTRUM; SELENIZATION; SEMICONDUCTING TERNARY COMPOUNDS; THERMAL ANNEALING;

THIN FILMS;

EID: 38649110453     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.11.172     Document Type: Article

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