Study of band alignment at CBD-CdS/Cu(In1-xGa x)Se2 (x = 0.2 - 1.0) interfaces by photoemission and inverse photoemission spectroscopy

Materials Research Society Symposium Proceedings

Volumn 1012, Issue , 2007, Pages 145-150

  Teshima, Shimpei ^a   Kashiwabara, Hirotake ^a   Masamoto, Keimei ^a   Kikunaga, Kazuya ^a   Takeshita, Kazunori ^a   Okuda, Tetsuji ^a   Sakurai, Keiichiro ^b   Ishizuka, Shogo ^b   Yamada, Akimasa ^b   Matsubara, Koji ^b   Niki, Shigeru ^b   Yoshimura, Yukio ^c   Terada, Norio ^a,b  

^a KAGOSHIMA UNIVERSITY   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^c Kagoshima Prefectural Institute of Industrial Technology   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTION BANDS; ENERGY GAP; PHOTOELECTRON SPECTROSCOPY; SEMICONDUCTING CADMIUM COMPOUNDS; ALIGNMENT; CADMIUM SULFIDE; GALLIUM ALLOYS; HETEROJUNCTIONS;

BAND ALIGNMENT; CONDUCTION BAND MINIMUM (CBM); ENERGY SPACING; INVERSE PHOTOEMISSION SPECTROSCOPY (IPES); CHEMICAL-BATH DEPOSITION; CO-EVAPORATIONS; CONDUCTION BAND OFFSET; CONDUCTION-BAND MINIMUM; INVERSE PHOTOEMISSION SPECTROSCOPY; LOCAL ACCUMULATIONS; RELATED IMPURITIES; VALENCE-BAND MAXIMUMS;

GRAIN BOUNDARIES; GALLIUM;

EID: 38549174601     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-1012-y03-19     Document Type: Conference Paper

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