Band alignment at CdS/wide-band-gap Cu(In,Ga)Se2 hetero-junction by using PES/IPES

Materials Research Society Symposium Proceedings

Volumn 865, Issue , 2005, Pages 155-160

  Kong, S H ^a   Kashiwabara, H ^a   Ohki, K ^a   Itoh, K ^a   Okuda, T ^a   Niki, S ^a   Sakurai, K ^b   Yamada, A ^b   Ishizuka, S ^b   Terada, N ^a,b  

^a KAGOSHIMA UNIVERSITY   (Japan)

^b National Institute of Advanced Industrial Science and Technology   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CADMIUM SULFIDE; DEPOSITION; EMISSION SPECTROSCOPY; ENERGY GAP; INTERFACES (MATERIALS); PHOTOEMISSION; CONDUCTION BANDS; HETEROJUNCTIONS; KINETICS; PHOTOELECTRON SPECTROSCOPY;

CHEMICAL BATH DEPOSITION (CBD); CONDUCTION BAND OFFSET (CBO); PHOTOEMISSION SPECTROSCOPY (PES); CHEMICAL-BATH DEPOSITION; CONDUCTION BAND OFFSET; CONDUCTION-BAND MINIMUM; INTRINSIC PROPERTY; INVERSE PHOTOEMISSION SPECTROSCOPY; ION KINETIC ENERGY; SURFACE CONTAMINATIONS; VALENCE-BAND MAXIMUMS;

HETEROJUNCTIONS; ENERGY GAP;

EID: 84904967027     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-865-f5.16     Document Type: Conference Paper

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