High-pressure electrical transport measurements on p-type GaSe and InSe

High Pressure Research

Volumn 26, Issue 4, 2006, Pages 513-516

  Errandonea, D ^a   Martinez Garcia, D ^a   Segura, A ^a   Ruiz Fuertes, J ^a   Lacomba Perales, R ^a   Fages, V ^a   Chevy, A ^b   Roa, L ^b   Jose, V Munoz San ^a  

^a UNIVERSITY OF VALENCIA   (Spain)

^b SORBONNE UNIVERSITÉ   (France)

Author keywords

GaSe; High pressure; InSe; Transport properties

Indexed keywords

ELECTRON TRANSPORT PROPERTIES; GALLIUM COMPOUNDS; HIGH PRESSURE EFFECTS; HOLE CONCENTRATION; HOLE MOBILITY; LAYERED SEMICONDUCTORS;

DIFFERENT PRESSURES; ELECTRICAL TRANSPORT MEASUREMENTS; GASE; HIGH PRESSURE; INSE; RESISTIVITY MEASUREMENT; TRANSPORT PARAMETERS; TYPE INVERSION;

SELENIUM COMPOUNDS;

EID: 38549143230     PISSN: 08957959     EISSN: 14772299     Source Type: Journal    
DOI: 10.1080/08957950601101787     Document Type: Conference Paper

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