Transport measurements in InSe under high pressure and high temperature: Shallow-to-deep donor transformation of Sn related donor impurities

Semiconductor Science and Technology

Volumn 18, Issue 4, 2003, Pages 241-246

  Errandonea, D ^a,b   Segura, A ^a   Manjon F J ^c   Chevy, A ^d  

^a UNIVERSITY OF VALENCIA   (Spain)

^b ARGONNE NATIONAL LABORATORY   (United States)

^c UNIVERSITAT POLITÈCNICA DE VALÈNCIA   (Spain)

^d SORBONNE UNIVERSITÉ   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRONS; HIGH PRESSURE EFFECTS IN SOLIDS; HIGH TEMPERATURE EFFECTS; HYDROSTATIC PRESSURE; IMPURITIES; SEMICONDUCTOR DOPING; TIN; TRANSPORT PROPERTIES;

DONOR IMPURITIES; SHALLOW TO DEEP DONOR TRANSFORMATION; TRANSPORT MEASUREMENT; TRANSPORT PARAMETERS;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0037392564     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/18/4/308     Document Type: Article

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