Impact of iron and molybdenum in mono and multicrystalline float-zone silicon solar cells

Solid State Phenomena

Volumn 131-133, Issue , 2008, Pages 15-20

  Coletti, G ^a   Geerligs, L J ^a   Manshanden, P ^a   Swanson, C ^b   Riepe, S ^c   Warta, W ^c   Arumughan, J ^d   Kopecek, R ^e  

^a TNO   (Netherlands)

^b EASTMAN KODAK COMPANY   (United States)

^c FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

^d UNIVERSITY OF KONSTANZ   (Germany)

^e International Solar Energy Research Center   (Germany)

Author keywords

Crystalline silicon; Feedstock; Impurities; Iron; Molybdenum; Neutron activation analysis

Indexed keywords

IMPURITIES; IRON; MOLYBDENUM; NEUTRON ACTIVATION ANALYSIS; CHEMICAL ACTIVATION; CONTAMINATION; FEEDSTOCKS; GRAIN BOUNDARIES; NEUTRON LOGGING; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON WAFERS;

CRYSTALLINE SILICON; FEEDSTOCK; CONTAMINATION LEVELS; CRYSTALLINE SILICONS; DIFFUSION LENGTH; MONO AND MULTICRYSTALLINE; MONOCRYSTALLINE WAFERS; MULTICRYSTALLINE; MULTICRYSTALLINE CELLS; SEGREGATION COEFFICIENTS;

SOLAR CELLS; SILICON SOLAR CELLS;

EID: 38549125463     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: None     Document Type: Conference Paper

References (11)

1. J.R. Davis et al., Impurities in Silicon Solar Cells, IEEE Trans. on Electron Devices, V. ED-27, No4, (1980).
2. A.A. Istratov et al., Metal content of multicrystalline silicon for solar cells and its impact on minority carrier diffusion length, JAP, V.94 (10), pp. 6552-6559, (2003).
3. T. Hamaguchi and Y. Hayamizu, Deep level associated with molybdenum in silicon, Japanese Journal of Applied Physics, V. 30, N.11A, pp. 1837-1839, (1991).
4. W. Zulehner, Historical overview of Silicon Crystal Pulling Development, Materials Science and Engineering: B, V 73, N 1, pp. 7-15(9), (2000).
5. D. Macdonald et al., Transition-metal profiles in a multicrystalline silicon ingot, JAP, V.97, 033523, (2005).
6. Hopkins et al., Silicon materials task of the Low Cost Solar Array Project Effect of impurities and processing on silicon solar cells, DOE JPL-954331-82 13, (1982)
7. G. Coletti et al., Multicrystalline float zone silicon with fe and mo impurities: solar cell process and lifetime studies, 21 st European Photovoltaic Solar Energy Conference, Dresden, (2006)
8. C.C. Swanson et al., Measurement of ultra-trace level metallic impurities in silicon wafers utilizing neutron activation analysis, J. of Radioanalytical and Nuclear Chemistry, V 248, N1, 69-74, (2001)
9. W.C. O'Mara et al., Handbook of semiconductor silicon technology, Noyes Publications, (1990).
10. A. Schönecker, et al., Sensitivity analysis for the determination of recombination parameters in Si wafers using harmonic carrier generation, J. Appl. Phys. 79, 1497 (1996).
11. P.A. Basore, Numerical modeling of textured silicon solar cells using PC-1D, IEEE Tr. El. Devices, 37 (2), p.337, (1990).