Point defects in 4H SiC grown by halide chemical vapor deposition

Materials Science Forum

Volumn 556-557, Issue , 2007, Pages 473-476

  Zvanut, M E ^a   Chung, H J ^b   Polyakov, A Y ^b   Skowronski, M ^b  

^a UNIVERSITY OF ALABAMA AT BIRMINGHAM   (United States)

^b CARNEGIE MELLON UNIVERSITY   (United States)

Author keywords

4H silicon carbide; Chemical vapor deposition; Electron paramagnetic resonance; Point defects

Indexed keywords

ELECTRON RESONANCE; ELECTRON SPIN RESONANCE SPECTROSCOPY; PARAMAGNETIC RESONANCE; PARAMAGNETISM; POINT DEFECTS; SILICON CARBIDE;

4H SILICON CARBIDE; CARBON VACANCY; ELECTRICALLY ACTIVE CENTERS; ELECTRON PARAMAGNETIC RESONANCE SPECTROSCOPY; HALIDE CHEMICAL VAPOR DEPOSITION; HYPERFINE LINES; NEGATIVELY CHARGED; SHALLOW DEFECTS;

CHEMICAL VAPOR DEPOSITION;

EID: 38449104539     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.556-557.473     Document Type: Conference Paper

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