A simple and accurate resist parameter extraction method for sub 80nm DRAM patterns

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5377, Issue PART 3, 2004, Pages 1413-1421

  Lee, Sook ^a   Hwang, Chan ^a   Park, Dong Woon ^a   Kim, In Sung ^a   Kim, Ho Chul ^a   Woo, Sang Gyun ^a   Cho, Han Ku ^a   Han, Woo Sung ^a   Moon, Joo Tae ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

FIRM; Pupil Mesh Point; Resist parameter; Solid C; Weiss model

Indexed keywords

ACIDS; CALIBRATION; COMPUTER SIMULATION; DATA REDUCTION; DIFFUSION; LITHOGRAPHY; MATHEMATICAL MODELS; OPTIMIZATION; PARAMETER ESTIMATION; POLARIZATION;

DEVELOPMENT RATE MONITORING (DRM); PUPIL MESH POINTS; RESIST PARAMETERS; WEISS MODELS;

DYNAMIC RANDOM ACCESS STORAGE;

EID: 3843148204     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.536280     Document Type: Conference Paper

References (8)

1. B.W.Smith, "Challenges in high NA, polarization, and photoresists", Proc. SPIE 4691(2002) p.11
2. D.G.Flagello, "The influence of photoresist on the optical performance of high NA steppers", Proc.SPIE 2440(1995) p.340
3. C.A. Mack, "Resist metrology for lithography simulation, Part I: Exposure parameter measurements", Proc.SPIE 2725(1996) P.34
4. C.A.Mack, "Resist metrology for lithography simulation, Part II: Development parameter measurements", Proc.SPIE 2725(1996) P.49
5. R.A.Ferguson, "Modeling and simulation of multiple chemical states in photoresist materials", Proc SPIE 1086(1989) p.262
6. N.Jakatdar, "Characterization of a positive chemically amplified photoresist for process control", Proc SPIE 3332(1998) P.586
7. J. Byers, "Calibration of chemically amplified resist models'" Proc SPIE 2724(1996) p.156
8. Weiss M, "Modeling and Simulation of a Chemically Amplified DUV Resist Using the Effective Acid Concept", Microelectronic Engineering 27(1995) p.405.