Residual photoresist removal from Si and GaAs surface by atomic hydrogen flow treatment

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5401, Issue , 2004, Pages 86-91

  Anishchenko, E ^a   Diamant, V ^b   Kagadei, V ^a   Nefeyodtsev, E ^c   Oskomov, K ^c   Proskurovsky, D ^c   Romanenko, S ^c  

^a Research Institute of Semiconductor Devices   (Russian Federation)

^b Atomic Hydrogen Technologies Ltd   (Israel)

^c INSTITUTE OF HIGH CURRENT ELECTRONICS   (Russian Federation)

Author keywords

Atomic hydrogen; Gallium arsenide; Low k dielectric; Residual resist; Silicon; Surface cleaning

Indexed keywords

CHARGED PARTICLES; DIELECTRIC MATERIALS; INTEGRATED CIRCUITS; PHOTORESISTORS; PLASMA APPLICATIONS; PRESSURE EFFECTS; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM ARSENIDE; SILICON; SURFACE CLEANING; SURFACE TREATMENT;

ATOMIC HYDROGEN; LOW-K DIELECTRICS; RESIDUAL PHOTORESIST REMOVAL; RESIDUAL RESIST;

CHEMICALS REMOVAL (WATER TREATMENT);

EID: 3843132937     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.557263     Document Type: Conference Paper

References (4)

1. N. H. Hendricks, "Low-k (<3) intermetal dielectrics", Solid State Technology, March, P. 31-32, 2003.
2. L. Peters, "Low-k Drives New Stripping Solutions", Semiconductor International, January 2002.
3. J. Hu, W. Uesato, P. Schoenborn, "Resist Stripping for Multilevel Interconnect Integrating Low k Dielectric Materials", Proceeding of AVS First International Conference on Microelectronics and Interfaces, February, P. 203-206, 2000.
4. V. A. Kagadei, D. I. Proskurovsky, "Use of a new type of atomic hydrogen source for cleaning and hydrogenation of compound semiconductive materials", J. Vac. Sci. & Technol., A 16 (4), P. 2556-2561, 1998.