Mechanisms of defect generation in chemically amplified resist processes

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5376, Issue PART 2, 2004, Pages 1223-1232

  Shimoaoki, Takeshi ^a   Naito, Ryouichiro ^a   Kitano, Junichi ^a  

^a TOKYO ELECTRON LTD   (Japan)

Author keywords

BARC; Defect; Exposure Dose

Indexed keywords

AGGLOMERATION; DEFECTS; EVALUATION; LASER BEAMS; LITHOGRAPHY; NOZZLES; PH EFFECTS;

BOTTOM ANTI-REFLECTIVE COATING (BARC); CRITICAL DIMENSION; EXPOSURE DOSE; PHOTO ACID GENERATORS (PAG);

REFLECTIVE COATINGS;

EID: 3843124146     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.535088     Document Type: Conference Paper

References (2)

1. O. Miyahara, Y. Kiba, Y. Ono, "Post-development Defect Evaluation," Proc. SPIE 4344 598, (2001).
2. Y. Ono, O. Miyahara, Y. Kiba, J. Kitano, "Behavior of Chemically Amplified Resist Defects in TMAH Solution," Proc.SPIE 4689 911, (2002).