Behavior of chemically amplified resist defects in TMAH solution

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4689 II, Issue , 2002, Pages 911-918

  Ono, Yuko ^a   Miyahara, Osamu ^a   Kiba, Yukio ^a   Kitano, Junichi ^a  

^a TOKYO ELECTRON LTD   (Japan)

Author keywords

Chemically amplified resist; Defect; Developer; TMAH

Indexed keywords

ARGON; DEFECTS; DISSOLUTION; KRYPTON; PARTICLE SIZE ANALYSIS;

CHEMICALLY AMPLIFIED RESISTS;

PHOTORESISTS;

EID: 0036031525     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.473419     Document Type: Conference Paper

References (3)

1. O. Miyahara, Y. Kiba, and Y. Ono, "Post-development defect evaluation", Proc. SPIE 4344, 598 (2001).
2. th Symposium on ULSI Ultra Clean Technology, 354-361 (1993).
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