Fulfillment of model-based OPC for contact patterns in 60 nm level logic device

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5377, Issue PART 2, 2004, Pages 1157-1164

  Kim, Sang Wook ^a   Lee, Sung Woo ^a   Park, Chang Min ^a   Choi, Soo Han ^a   Lee, Young Mi ^a   Kang, Yool ^a   Yeo, Gi Sung ^a   Lee, Jung Hyeon ^a   Cho, Han Ku ^a   Han, Woo Sung ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

ACLV; Contact; Model; OAI; OCV; OPC

Indexed keywords

COMPUTER SIMULATION; DATA REDUCTION; DISTANCE MEASUREMENT; ERROR ANALYSIS; LIGHTING; MATHEMATICAL MODELS; TRANSISTORS;

CRITICAL DIMENSIONS (CD); NUMERICAL APERTURE; ON CHIP VARIATIONS (OCV); OPTICAL PROXIMITY CORRECTIONS (OPCS);

LOGIC DEVICES;

EID: 3843121939     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.536268     Document Type: Conference Paper

References (2)

1. A. Kroyan, P. G Watson, R. A. Cirelli, O. Nalamasu, F. K. Tittel, "Effect of subresolution assist features on depth of focus and uniformity of contact windows for 193-nm lithography", Optical Microlithography XII, Proc. SPIE Vol.3679, p. 630-638, 1999.
2. Takeaki Ebihara, Toshihiro Oga, "Evaluation of various pitches of 100-nm contact holes applying IDEALSmile with high NA KrF scanner", Optical Microlithography XVI, Proc. SPIE Vol. 5040, p. 1247-1257, 2003.