Behavior of chemically amplified resist defects in TMAH solution (3)

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5376, Issue PART 2, 2004, Pages 1206-1214

  Ono, Yuko ^a   Shimoaoki, Takeshi ^a   Naito, Ryouichiro ^a   Kitano, Junichi ^a  

^a TOKYO ELECTRON LTD   (Japan)

Author keywords

Chemically Amplified Resist; Defect; TMAH

Indexed keywords

CHEMICALLY AMPLIFIED RESISTS; DEPROTECTION REACTIONS; MICRODEFECTS; TMAH;

AGGLOMERATION; CRYSTAL DEFECTS; PARTICLE SIZE ANALYSIS; SCANNING ELECTRON MICROSCOPY; SHRINKAGE;

PHOTORESISTS;

EID: 3843099178     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.534982     Document Type: Conference Paper

References (3)

1. O. Miyahara, Y. Kiba, and Y. Ono, "Post-development defect evaluation",Proc. SPIE 4344, 598 (2001).
2. T. Osada, "Increasing ⌈Non visual defect⌋, Expectation for EB technology as the breakthrough", EB Solutions2003, (2003)
3. Y. Ono, O. Miyahara, Y. Kiba, and J.Kitano, "Behavior of Chemically Amplified Resist Defects in TMAH Solution ", Proc. SPIE, 4689, 110 (2002)