Void formation in a copper-via-structure depending on the stress free temperature and metallization geometry

Proceedings of the 5th International Conference on Thermal and Mechanical Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2004

Volumn , Issue , 2004, Pages 367-372

  Weide Zaage, Kirsten ^a   Dalleau, David ^a   Danto, Yves ^b   Fremont, Helene ^b  

^a LEIBNIZ UNIVERSITY HANNOVER   (Germany)

^b UNIVERSITÉ BORDEAUX 1   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DUAL DAMASCENE (DD) COPPER METALLIZATION STRUCTURES; INTERFACE DIFFUSION; MASS TRANSPORT PATHWAYS; STRESS MIGRATION;

COMPUTER SIMULATION; COPPER; CURRENT DENSITY; DEGRADATION; ELECTROMIGRATION; FINITE ELEMENT METHOD; GRAIN BOUNDARIES; INTERFACES (MATERIALS); METALLIZING; STRESS ANALYSIS; THERMAL EXPANSION;

MICROELECTRONIC PROCESSING;

EID: 3843052429     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

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3. Hu, C-K.; et.al., "Mechanism for very long electromigration lifetime in dual-damascene Cu interconnects", App. Phys. Lett., Vol. 78, No. 7, 2001, pp. 904.
4. Fischer, A.; et. al., "Electromigration failure Mechanism studies on Copper Interconnects", Proc. Interconn. Tec. Conf., pp. 139.
5. Weide-Zaage, K.; Dalleau, D.; Yu, X., "Static and dynamic analysis of failure locations and void formation in interconnects due to various migration mechanism", Mat. Sci. Semi. Proc., 6 (2003), 85-92.
6. Dalleau, D.; Weide-Zaage, K.; Danto,Y., "Simulation of time depending void formation in copper, aluminum and tungsten plugged via structures", Micro. Reliab., 43 (2003), 1821-1826
7. Touloukian, Y.S., "Thermophysical Properties of Matter", Vol. 1&2, Plenum Pub., Corb, 1970.
8. Properties of Silicon, INSPEC, The Institution of Electrical Engineers, London and New York, 1988.