193-nm negative resist based on acid-catalyzed elimination of polar molecules

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5376, Issue PART 1, 2004, Pages 71-78

  Sooriyakumaran, R ^a   Davis, B ^a   Larson, C E ^a   Brock, P J ^a   DiPietro, R A ^a   Wallow, T I ^a   Connor, E F ^a   Sundberg, L ^a   Breyta, G ^a   Allen, R D ^a   Patel, K ^b   Varanasi, P R ^b  

^a IBM ALMADEN RESEARCH CENTER   (United States)

^b IBM MICROELECTRONICS   (United States)

Author keywords

193 nm lithography; Chemically amplified; Elimination of polar molecules; Negative tone photoresist; Polarity switch

Indexed keywords

193 NM LITHOGRAPHY; CHEMICALLY AMPLIFIED; ELIMINATION OF POLAR MOLECULES; NEGATIVE TONE PHOTORESISTS; POLARITY SWITCH;

ALCOHOLS; ATTENUATION; CARBOXYLIC ACIDS; CATALYSIS; DEHYDRATION; IMAGING TECHNIQUES; MOLECULES; MONOMERS; OPTICAL RESOLVING POWER; OPTIMIZATION; POLYMERS;

PHOTORESISTORS;

EID: 3843050130     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.536432     Document Type: Conference Paper

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