Epitaxial silicon overgrowth of C60 on the Si(1 0 0)-2 × 1 surface

Surface Science

Volumn 602, Issue 2, 2008, Pages 493-498

  Senftleben, Oliver ^a   Stimpel Lindner, Tanja ^a   Eisele, Ignaz ^a   Baumgärtner, Hermann ^a  

^a BUNDESWEHR UNIVERSITY MUNICH   (Germany)

Author keywords

C60; Epitaxy; Fullerene; Scanning tunneling microscopy; Si(1 0 0) 2 1; Silicon

Indexed keywords

CRYSTAL STRUCTURE; EPITAXIAL GROWTH; MONOLAYERS; SCANNING TUNNELING MICROSCOPY; SILICON;

CRATER DIMINUTION; CRATER FORMATION; CRYSTAL MORPHOLOGY;

FULLERENES;

EID: 38349190313     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2007.10.043     Document Type: Article

References (34)

1. Kroto H.W., Heath J.R., O'Brien S.C., Curl R.F., and Smalley R.E. Nature 318 (1985) 162
2. Li Y.Z., Chander M., Patrin J.C., Weaver J.H., Chibante L.P.F., and Smalley R.E. Phys. Rev. B 45 (1992) 13837
3. Sakamoto K., Harada M., Kondo D., Kimura A., Kakizaki A., and Suto S. Phys. Rev. B 58 (1998) 13951
4. Cepek C., Schiavuta P., and Sancrotti M. Phys. Rev. B 60 (1999) 2068
5. Wang X.D., Hashizume T., Shinohara H., Saito Y., Nishina Y., and Sakurai T. Phys. Rev. B 47 (1993) 15923
6. Chen D., and Sarid D. Surf. Sci. 329 (1995) 206
7. Xu H., Chen D.M., and Creager W.N. Phys. Rev. B 70 (1993) 1850
8. Chen D., Chen J., and Sarid D. Phys. Rev. B 50 (1994) 10905
9. Chen D.M., Xu H., Creager W.N., and Burnett P. J. Vac. Sci. Technol. B 12 (1994) 1910
10. Chen D., and Sarid D. Phys. Rev. B 49 (1994) 7612
11. Chen D., Gallagher Mark.J., and Sarid D. J. Vac. Sci. Technol. B 12 (1994) 1947
12. Yao X., Ruskell T.G., Workman R.K., Sarid D., and Chen D. Surf. Sci. 329 (1996) 206
13. De Seta M., Sanvitto D., and Evangelisti F. Phys. Rev. B 59 (1999) 9878
14. Chen D., and Sarid D. Surf. Sci. 318 (1994) 74
15. Chen D., Workman R.K., and Sarid D. J. Vac. Sci. Technol. B 14 (1996) 979
16. Suto S., Hu C.-W., Sato F., Tanaka M., Kasukabe Y., and Kasuya A. Thin Solid Films 369 (2000) 265
17. Hamza A.V., and Balooch M. Chem. Phys. Lett. 201 (1993) 404
18. Hamza A.V., Balooch M., and Moalem M. Surf. Sci. 317 (1994) L1129
19. Chen D., Workman R., and Sarid D. Electr. Lett. 30 (1994) 1007
20. Reinke P., Oelhafen P., and Christiansen S. Surf. Sci. 507-510 (2002) 630
21. Chen D., Chen J., and Sarid D. Surf. Sci. 321 (1994) 190
22. Eaglesham D.J., Gossmann H.-J., and Cerullo M. Phys. Rev. Lett. 65 (1990) 1227
23. Moriarty P., Ma Y.R., Upward M.D., and Beton P.H. Surf. Sci. 407 (1998) 27
24. Gu B.L., Maruyama Y., Yu J.Z., Ohno K., and Kawazoe Y. Phys. Rev. B 49 (1994) 16202
25. Lu X., Grobis M., Khoo K.H., Louie S.G., and Crommie M.F. Phys. Rev. B 70 (2004) 115418
26. Hashizume T., Motai K., Wang X.D., Shinohara H., Saito Y., Maruyama Y., Ohno K., Kawazoe Y., Nishina Y., Pickering H.W., Kuk Y., and Sakurai T. Phys. Rev. Lett. 71 (1993) 2959
27. Maruyama Y., Ohno K., and Kawazoe Y. Phys. Rev. B 52 (1995) 2070
28. Lu X., Grobis M., Khoo K.H., Louie S.G., and Crommie M.F. Phys. Rev. Lett. 90 (2003) 96802
29. Hou J.G., Jinlong Y., Haiqian W., Qunxiang L., Hai L., Wang B., Chen D.M., and Qingshi Z. Phys. Rev. Lett. 83 (1999) 3001
30. Egger W., Sperr P., Kögel G., and Dollinger G. Phys. Status Solidi (c) 4 (2007) 3969
31. Kim W., Kim H., Lee G., and Koo J.-Y. Phys. Rev. Lett. 89 (2002) 106102
32. Rücker H., Methfeld M., Buigel E., and Osten H.J. Phys. Rev. Lett. 72 (1994) 3578
33. Köhler U., Demuth J.E., and Hamers R.J. J. Vac. Sci. Technol. A 7 (1989) 2860
34. Tung R.T., and Schrey F. Phys. Rev. Lett. 63 (1989) 1277