High rate growth of highly-crystallized Ge films on quartz from VHF inductively-coupled plasma of GeH4 + H2

Materials Science Forum

Volumn 561-565, Issue PART 2, 2007, Pages 1209-1212

  Sakata, Tsutomu ^a   Makihara, Katsunori ^a   Deki, Hidenori ^b   Higashi, Seiichiro ^a   Miyazaki, Seiichi ^a  

^a HIROSHIMA UNIVERSITY   (Japan)

^b HIROSHIMA KOKUSAI GAKUIN UNIVERSITY   (Japan)

Author keywords

Crystalline Ge; Inductively coupled plasma; Very high frequency

Indexed keywords

DEPOSITION; GROWTH RATE; INDUCTIVELY COUPLED PLASMA; OPTIMIZATION; THIN FILMS;

AMORPHOUS INCUBATION; CRYSTALLINE GE; VERY HIGH FREQUENCY;

GERMANIUM;

EID: 38349085634     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-462-6.1209     Document Type: Conference Paper

References (6)

1. S. Suzuki, M. Kondo and A. Matsuda: Solar Energy Mate. Solar Cells Vol. 74 (2002), p. 489
2. M. Goto, H. Toyoda, M. Kitagawa, T. Hirao and H. Sugai: Jpn. J. Appl. Phys. Vol. 34 (1997), p. 3714
3. N. Kosku and S. Miyazaki: Trans. of Mat. Res. Soc. of Jpn. Vol. 30 (2005), p. 279
4. T. Sakata, K. Makihara, H. Murakami, S.Higashi and S.Miyazaki: Thin Solid Films Vol. 515 (2007), p.4971
5. T. Sakata, K. Makihara, S. Higashi and S. Miyazaki: Ext. Abst. of 2nd Int. Workshop on New Group IV Semiconductor Nanoelectronics (Sendai, Japan 2006) p. 61.
6. H. Fukuda, T. Kobayashi, T. Endoh, S. Nomura, A. Sakai and Y. Ueda: Appl. Surf. Sci. Vol. 130 (1998), p. 776