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Volumn 539-543, Issue PART 5, 2007, Pages 5025-5030

Hydrogen sensing characteristics of high electron mobility transistor with a catalytic Pd metal

Author keywords

(nH4)2Sx; HFET; Sulfur treatment; Temperature dependent characteristics

Indexed keywords

CATALYSIS; HYDROGEN; PALLADIUM COMPOUNDS;

EID: 38349011342     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-428-6.5025     Document Type: Conference Paper
Times cited : (1)

References (12)
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    • L. M. Lechuga, A. Calle, D. Golmayo, and P. Tejedor and F. Briones, A new hydrogen sensor based on a Pt/GaAs Schottky diode, J. Electrochem. Soc. Vol.138 (1991) pp.159-162.
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    • J. Schalwig, G. Müller, U. karrer, M. Eickhoff, O. Ambacher, and M. Stutzmann, L. Görgens, and G. Dollinger, Hydrogen response mechanism of Pt-GaN Schottky diodes, Appl. Phys. Lett.,. 80 (2002) pp.1222-1224.
    • J. Schalwig, G. Müller, U. karrer, M. Eickhoff, O. Ambacher, and M. Stutzmann, L. Görgens, and G. Dollinger, Hydrogen response mechanism of Pt-GaN Schottky diodes, Appl. Phys. Lett.,. Vol.80 (2002) pp.1222-1224.
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    • Pd-on-GaAs Schottky contact: Its barrier height and response to hydrogen
    • H. Y. Nie and Y. Mammichi, Pd-on-GaAs Schottky contact: its barrier height and response to hydrogen, Jpn. J. Appl. Phys., Vol.30 (1991) pp.906-913.
    • (1991) Jpn. J. Appl. Phys , vol.30 , pp. 906-913
    • Nie, H.Y.1    Mammichi, Y.2
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    • high temperature Pt Schottky diode gas sensors on n-type GaN
    • B. P. Luther, A. D. Wolter, and S. E. Mohney, high temperature Pt Schottky diode gas sensors on n-type GaN, Sens. Actuators B. Vol.56 (1999) pp.164-168.
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    • Luther, B.P.1    Wolter, A.D.2    Mohney, S.E.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.