Experimental class-F power amplifier design using computationally efficient and accurate large-signal pHEMT model

IEEE Transactions on Microwave Theory and Techniques

Volumn 53, Issue 5, 2005, Pages 1723-1731

  Wren, Michael ^a   Brazil, Thomas J ^a  

^a UNIVERSITY COLLEGE DUBLIN   (Ireland)

Author keywords

Amplifier; Class F; Nonlinear modeling; Pseudomorphic high electron mobility transistor (pHEMT)

Indexed keywords

CODE DIVISION MULTIPLE ACCESS; COMPUTER AIDED DESIGN; ELECTRIC NETWORK TOPOLOGY; HIGH ELECTRON MOBILITY TRANSISTORS; TIME DOMAIN ANALYSIS; TUNING; WIRELESS TELECOMMUNICATION SYSTEMS;

CIRCUIT TUNING; CLASS F; NONLINEAR MODELING; PSEUDOMORPHIC HIGH ELECTRON MOBILITY TRANSISTORS (PHEMT);

POWER AMPLIFIERS;

EID: 19544382718     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMTT.2005.847108     Document Type: Article

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