Comparison of PECVD-WNx and CVD-TiN films for the upper electrode of Ta2O5 capacitors

Proceedings of the IEEE 1998 International Interconnect Technology Conference, IITC 1998

Volumn 1998-June, Issue , 1998, Pages 96-98

  Park, B L ^a   Lee, M B ^a   Moon, K J ^a   Lee, H D ^a   Kang, H K ^a   Lee, M Y ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

METALLIC FILMS; TANTALUM OXIDES; TIN; TITANIUM NITRIDE;

CVD TINS; ELECTRICAL CHARACTERISTIC; EQUIVALENT CAPACITANCE; STACK STRUCTURE; STEP COVERAGE;

ELECTRODES;

EID: 38049128311     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IITC.1998.704761     Document Type: Conference Paper

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