Characteristics of PECVD grown tungsten nitride films as diffusion barrier layers for ULSI DRAM applications

Journal of Electronic Materials

Volumn 26, Issue 2, 1997, Pages

  Park, Byung Lyul ^a   Ko, Dae Hong ^a   Kim, Young Sun ^a   Ha, Jung Min ^a   Park, Young Wook ^a   Lee, Sang In ^a   Lee, Hyeon Deok ^a   Lee, Myoung Bum ^a   Chung, U In ^a   Koh, Young Bum ^a   Lee, Moon Yong ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; FILMS; PHASE TRANSITIONS; TITANIUM NITRIDE; TUNGSTEN COMPOUNDS; VLSI CIRCUITS;

DIFFUSION BARRIER; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; TUNGSTEN NITRIDE;

DIFFUSION;

EID: 0031078714     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (11)