Fabrication and transport properties of ZnONb-1 wt%-doped SrTi O3 epitaxial heterojunctions

Applied Physics Letters

Volumn 92, Issue 1, 2008, Pages

  Wu, Yunlong ^a   Zhang, Liuwan ^a   Xie, Guanlin ^a   Zhu, Jia Lin ^a   Chen, Yonghai ^b  

^a TSINGHUA UNIVERSITY   (China)

^b INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; DIFFUSION BARRIERS; ELECTRON TUNNELING; FABRICATION; NIOBIUM; SCHOTTKY BARRIER DIODES; THERMIONIC EMISSION; TRANSPORT PROPERTIES; ZINC OXIDE;

EPITAXIAL HETEROJUNCTIONS; PULSE LASER DEPOSITION METHOD;

EPITAXIAL GROWTH;

EID: 38049004816     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2831913     Document Type: Article

References (17)

1. J. R. Sun, C. M. Xiaong, B. G. Shen, P. Y. Wang, and Y. X. Weng, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1702128 84, 2611 (2004).
2. J. R. Sun, C. M. Li, and H. K. Wong, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1762703 84, 4804 (2004).
3. H. Tanaka, J. Zhang, and T. Kawai, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.88.027204 88, 027204 (2002).
4. H. Sheng, S. Muthukumar, N. W. Emanetoglu, and Y. Lu, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1463700 80, 2132 (2002).
5. H. von Wenckstern, E. M. Kaidashev, M. Lorenz, H. Hochmuth, G. Biehne, J. Lenzner, V. Gottschalch, R. Pickenhain, and M. Grundmann, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1638898 84, 79 (2004).
6. U. Grossner, S. Gabrielsen, T. M. Børseth, J. Grillenberger, A. Y. Kuznetsov, and B. G. Svensson, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1790592 85, 2259 (2004).
7. H. V. Wenckstern, G. Biehne, R. A. Rahman, H. Hochmuth, M. Lorenz, and M. Grundmann, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2180445 88, 092102 (2006).
8. M. Karger and M. Schilling, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.71.075304 71, 075304 (2005).
9. Y. M. Cui, L. W. Zhang, C. C. Wang, G. L. Xie, C. P. Chen, and B. S. Cao, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1927715 86, 203501 (2005).
10. J. Robertson, J. Vac. Sci. Technol. B JVTBD9 0734-211X 10.1116/1.591472 18, 1785 (2000).
11. Y. B. Hahn and D. O. Kim, J. Vac. Sci. Technol. A JVTAD6 0734-2101 10.1116/1.581714 17, 1982 (1999).
12. K. Jacobi, G. Zwicker, and A. Gutmann, Surf. Sci. SUSCAS 0039-6028 10.1016/0039-6028(84)90199-7 141, 109 (1984).
13. A. Yamada, K. Matsubara, K. Sakurai, S. Ishizuka, H. Tampo, P. J. Fons, K. Iwata, and S. Niki, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1831566 85, 5607 (2004).
14. H. F. Tian, J. R. Sun, H. B. Lü, K. J. Jin, H. X. Yang, H. C. Yu, and J. Q. Li, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2084344 87, 164102 (2005).
15. Y. Z. Chen, J. R. Sun, Y. W. Xie, D. J. Wang, W. M. Lu, S. Liang, and B. G. Shen, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2719614 90, 143508 (2007).
16. H. C. Casey, Jr., J. Muth, S. Krishnankutty, and J. M. Zavada, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.116351 68, 2867 (1996).
17. J. H. Werner and H. H. Güttler, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.347243 69, 1522 (1991).