Evidence of the ground triplet state of silicon-carbon divacancies (P6, P7 centers) in 6H SiC: An EPR study

Materials Science Forum

Volumn 527-529, Issue PART 1, 2006, Pages 535-538

  Ilyin, I V ^a   Muzafarova, M V ^a   Mokhov, E N ^a   Sankin, V I ^a   Baranov, P G ^a   Orlinskii, S B ^b   Schmidt, J ^b  

^a IOFFE INSTITUTE   (Russian Federation)

^b LEIDEN UNIVERSITY   (Netherlands)

Author keywords

Defect; EPR; Vacancy

Indexed keywords

EXCITED STATES; GROUND STATE; INSULATION; VACANCIES;

DEFECT; INTERSYSTEM CROSSING (ISC); OPTICALLY EXCITED TRIPLET STATE; TRIPLET GROUND STATE;

SILICON CARBIDE;

EID: 37849045842     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-425-1.535     Document Type: Conference Paper

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