Epitaxial growth of 4H-SiC on 4° off-axis (0001) and (000-1) substrates by hot-wall CVD

Materials Science Forum

Volumn 527-529, Issue PART 1, 2006, Pages 219-222

  Wada, Keiji ^a,b   Kimoto, Tsunenobu ^a   Nishikawa, Kimito ^b   Matsunami, Hiroyuki ^c  

^a KYOTO UNIVERSITY   (Japan)

^b EcoTron Co LTD   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

C face; Homoepitaxy; Hot wall CVD

Indexed keywords

DOPING (ADDITIVES); EPITAXIAL GROWTH; PRESSURE EFFECTS; SURFACE MORPHOLOGY;

HOT-WALL CVD; LOW-PRESSURE GROWTH; STEP BUNCHING;

SILICON CARBIDE;

EID: 37849036752     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-425-1.219     Document Type: Conference Paper

References (5)

1. B. Thomas and C. Hecht: Mater. Sci. Forum Vols. 483-485 (2005), p. 141.
2. K. Fukuda, M. Kato, K. Kojima and J. Senzaki: Appl. Phys. Lett. Vol. 84 (2004), p. 2088.
3. K. Danno, T. Kimoto and H. Matsunami: Mater. Sci. Forum Vols. 457-460 (2004), p. 197.
4. H. Tsuchida, I. Kamata, T. Miyanagi, T. Nakamura, K. Nakayama, R. Ishii and Y. Sugawara: Jpn. J. Appl. Phys. Vol. 44 (2005), p. L806.
5. T. Kimoto, S. Nakazawa, K. Hashimoto and H. Matsunami: Appl. Phys. Lett. Vol. 79 (2001), p. 2761.