Analysis of low on-resistance in 4H-SiC double-epitaxial MOSFET

Materials Science Forum

Volumn 483-485, Issue , 2005, Pages 813-816

  Harada, Shinsuke ^a   Okamoto, Mitsuo ^a   Yatsuo, Tsutomu ^a   Fukuda, Kenji ^a   Arai, Kazuo ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Buried channel; DEMOSFET; MOSFET; On resistance

Indexed keywords

BLOCKING PROBABILITY; COMPUTER SIMULATION; ELECTRIC FIELDS; ELECTRIC RESISTANCE; EPITAXIAL FILMS; SILICON CARBIDE;

BLOCKING CHARACTERISTICS; BLOCKING VOLTAGE; BURIED CHANNELS; THICK GATE OXIDES;

MOSFET DEVICES;

EID: 33847739197     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-963-6.813     Document Type: Conference Paper

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