Investigation of the mechanism and growth kinetics of homoepitaxial 4H-SiC growth using CH3CI carbon precursor

Materials Science Forum

Volumn 527-529, Issue PART 1, 2006, Pages 171-174

  Lin, Huang De ^a   Wyatt, J L ^a   Koshka, Y ^a  

^a MISSISSIPPI STATE UNIVERSITY   (United States)

Author keywords

Chemical vapor deposition; Chlorine; Epitaxial growth; Halo carbon precursors; Kinetics

Indexed keywords

CARBON; CHEMICAL VAPOR DEPOSITION; CHLORINE COMPOUNDS; FLOW RATE; GROWTH KINETICS; SILICON CARBIDE;

CARBON SOURCE GAS; CARRIER GAS FLOW RATE; GAS SYSTEMS; HALO-CARBON PRECURSORS;

EPITAXIAL GROWTH;

EID: 37849031749     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-425-1.171     Document Type: Conference Paper

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