Direct growth of GaN on off-oriented SiC (0001) by molecular-beam epitaxy for GaN/SiC heterojunction bipolar transistor

Physica Status Solidi C: Conferences

Volumn 2, Issue 7, 2005, Pages 2208-2211

  Nakano, Y ^a   Suda, J ^a,b   Kimoto, T ^a  

^a KYOTO UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TRANSISTORS; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; SILICON CARBIDE; SUBSTRATES;

GAN LAYERS; SIC SUBSTRATES; SUBSTRATE MISORIENTATION;

GALLIUM NITRIDE;

EID: 26044431549     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200461549     Document Type: Conference Paper

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