Electrical characteristics temperature dependence of 600V-class deep implanted gate vertical JFET

Materials Science Forum

Volumn 483-485, Issue , 2005, Pages 881-884

  Mizukami, Makoto ^a   Takikawa, Osamu ^a   Imai, Seiji ^a   Kinoshita, Kozo ^a   Hatakeyama, Tetsuo ^a   Domon, Tomokazu ^a   Shinohe, Takashi ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

High voltage; Implantation; JFETs; Low loss; Low on resistance; SiC; Switching

Indexed keywords

ELECTRIC LOADS; GATE DIELECTRICS; ION IMPLANTATION; SEMICONDUCTOR SWITCHES; SILICON CARBIDE; WAVEFORM ANALYSIS;

BLOCKING VOLTAGE; ELECTRICAL CHARACTERISTICS; HIGH TEMPERATURE DEPENDENCE; LOW ON-RESISTANCE;

JUNCTION GATE FIELD EFFECT TRANSISTORS;

EID: 33750517621     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-963-6.881     Document Type: Conference Paper

References (2)

1. C. E. Weitzel, J. W. Palmour, C. H. Charter Jr., K. Moore, K. J. Nordquist, S. Allen, C. Thero, and M. Bhatnagar, IEEE Trans. Electron Devices, vol. 43, 1996, pp. 1732-1739, Oct.
2. M. Mizukami, O. Takikawa, M. Murooka, S. Imai, K. Kinoshita, T. Hatakeyama, W. Saito, I. Omura, and T. Shinohe, Materials Science Forum, vol. 457-460, 2003, pp. 1217-1220