|
Volumn 201, Issue 12, 2004, Pages 2699-2703
|
Vertical-conducting p-side-up GaN/mirror/Si light-emitting diodes by laser lift-off and wafer-transfer techniques
|
Author keywords
[No Author keywords available]
|
Indexed keywords
GALLIUM NITRIDE;
GOLD;
LASER BEAM EFFECTS;
LOW TEMPERATURE EFFECTS;
MIRRORS;
SAPPHIRE;
SILICON WAFERS;
TIN;
BONDING;
ELECTRIC POTENTIAL;
HEAT SINKS;
LIGHT REFLECTION;
OHMIC CONTACTS;
RAPID THERMAL ANNEALING;
SEMICONDUCTOR LASERS;
THERMAL CONDUCTIVITY;
THIN FILMS;
CURRENT INJECTION;
LASER LIFT-OFF;
LUMINANCE;
WAFER-TRANSFER;
EMISSION WAVELENGTHS;
LUMINANCE INTENSITY;
WAFER BONDING;
LIGHT EMITTING DIODES;
|
EID: 6344254529
PISSN: 00318965
EISSN: None
Source Type: Journal
DOI: 10.1002/pssa.200405075 Document Type: Conference Paper |
Times cited : (18)
|
References (10)
|