Effects of void formation on electrical and optical properties of 3C-SiC on Si(111) substrates

Materials Science Forum

Volumn 264-268, Issue PART 1, 1998, Pages 195-198

  Shim, H W ^a   Kim, K C ^a   Seo, Y H ^a   Nahm, K S ^a   Suh, E K ^a   Lee, H J ^a   Hwang, Y G ^b  

^a Chonbuk National University   (South Korea)

^b Wonkwang University   (South Korea)

Author keywords

Mobility; Photoluminescence; Si Outdiffusion; Void Formation

Indexed keywords

CARRIER CONCENTRATION; CRYSTAL LATTICES; ELECTRIC PROPERTIES; ELECTRON TRANSPORT PROPERTIES; FILM GROWTH; INTERFACES (MATERIALS); OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SUBSTRATES; THIN FILMS;

ELECTRIC MOBILITY; VOID FORMATION;

SILICON CARBIDE;

EID: 3743151649     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.264-268.195     Document Type: Article

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