메뉴 건너뛰기




Volumn 258-263, Issue PART 2, 1997, Pages 1087-1092

ODMR studies of as-grown and electron-irradiated GaN and AIN

Author keywords

AlN; Electron irradiation; GaN; PL ODMR

Indexed keywords

ANISOTROPY; ARSENIC; BAND STRUCTURE; MAGNETIC RESONANCE; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR GROWTH; SINGLE CRYSTALS;

EID: 3743139544     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Article
Times cited : (8)

References (12)
  • 7
    • 0029726098 scopus 로고    scopus 로고
    • eds. F.A. Ponce, R.D. Dupuis, S. Nakamura, and J.A. Edmond, (Pittsburgh: Materials Research Soc. Symp. Proc. No.395)
    • U. Kaufmann, M. Kunzer, C. Merz, I. Akasaki, and H. Amano, in Gallium Nitride and Related Materials, eds. F.A. Ponce, R.D. Dupuis, S. Nakamura, and J.A. Edmond, (Pittsburgh: Materials Research Soc. Symp. Proc. No.395) p. 633 (1996).
    • (1996) Gallium Nitride and Related Materials , pp. 633
    • Kaufmann, U.1    Kunzer, M.2    Merz, C.3    Akasaki, I.4    Amano, H.5
  • 9
    • 3743063089 scopus 로고    scopus 로고
    • eds. F.A. Ponce, T.D. Moustakas, I. Akasaki, and B.A. Monemar, (Pittsburgh: Materials Research Society Symp. Proc. No. 449)
    • P.W. Mason, A. Dörnen, V. Härle, F. Scholz, and G.D. Watkins, in III-V Nitrides, eds. F.A. Ponce, T.D. Moustakas, I. Akasaki, and B.A. Monemar, (Pittsburgh: Materials Research Society Symp. Proc. No. 449), p. 793 (1997).
    • (1997) III-V Nitrides , pp. 793
    • Mason, P.W.1    Dörnen, A.2    Härle, V.3    Scholz, F.4    Watkins, G.D.5
  • 11
    • 0010441277 scopus 로고
    • G.A. Slack and T.F. McNelly, J. Crystal Growth 42, 560 (1977).The sample we refer to here is the higher purity sample listed as W-154 in the above reference.
    • (1977) J. Crystal Growth , vol.42 , pp. 560
    • Slack, G.A.1    McNelly, T.F.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.