Theoretical studies on defects in SiC

Materials Science Forum

Volumn 258-263, Issue PART 2, 1997, Pages 739-744

  Deak P ^a   Gali, A ^a   Miro J ^a   Guiterrez, R ^b   Sieck, A ^b   Frauenheim, Th ^b  

^a TU Institute of Building Constructions and Sanitary Engineering Budapest   (Hungary)

^b CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

Nitrogen; Oxygen; Silicon carbide; Theory

Indexed keywords

CRYSTAL DEFECTS; LASER DOPPLER VELOCIMETERS; MATHEMATICAL MODELS; MOLECULAR DYNAMICS; NITROGEN; OXYGEN; QUANTUM THEORY; SEMICONDUCTING SILICON COMPOUNDS;

QUANTUM MOLECULAR DYNAMICS;

SILICON CARBIDE;

EID: 3743109447     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.258-263.739     Document Type: Article

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