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Volumn 258-263, Issue PART 1, 1997, Pages 509-514

Vacancy aggregates in silicon

Author keywords

Molecular dynamics; Ring hexavacancy; Silicon; Vacancies

Indexed keywords

ANNEALING; COMPUTATIONAL METHODS; COMPUTER SIMULATION; CRYSTAL DEFECTS; ELECTRONIC STRUCTURE; ENERGY GAP; HIGH TEMPERATURE OPERATIONS; MOLECULAR DYNAMICS;

EID: 3743089253     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.258-263.509     Document Type: Article
Times cited : (5)

References (34)
  • 3
    • 0004200991 scopus 로고
    • edited by S.T. Pantelides Gordon and Breach, New York
    • G.D. Watkins, in Deep Centers in Semiconductors, edited by S.T. Pantelides (Gordon and Breach, New York, 1986).
    • (1986) Deep Centers in Semiconductors
    • Watkins, G.D.1
  • 22
    • 3743124723 scopus 로고    scopus 로고
    • private communication
    • J.H. Nelson, private communication.
    • Nelson, J.H.1
  • 25
    • 3743082420 scopus 로고    scopus 로고
    • private communication
    • R. Jones, private communication.
    • Jones, R.1
  • 26
  • 27
    • 0001478334 scopus 로고
    • J. Hartung and J. Weber, Phys. Rev. B 48, 14161 (1993), and J. Appl. Phys. 77, 118 (1995).
    • (1995) J. Appl. Phys. , vol.77 , pp. 118


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.