Native and electron irradiation induced defects in 6H-SiC

Materials Science Forum

Volumn 258-263, Issue PART 2, 1997, Pages 721-726

  Friessnegg, T ^a   Dannefaer, S ^a  

^a UNIVERSITY OF WINNIPEG   (Canada)

Author keywords

Electron irradiation; Positron annihilation; SiC; Vacancies

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SPECTROSCOPIC ANALYSIS;

ELECTRON IRRADIATION; FRENKEL PAIR RECOMBINATION; POSITRON ANNIHILATION SPECTROSCOPY;

SILICON CARBIDE;

EID: 3743088276     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.258-263.721     Document Type: Article

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