Substitutional carbon in Ge and Si1-xGex

Materials Science Forum

Volumn 258-263, Issue PART 1, 1997, Pages 97-102

  Hoffmann, L ^a   Bach, J C ^a   Lundsgaard Hansen, J ^a   Nylandsted Larsen, A ^a   Bech Nielsen, B ^a   Leary, P ^b   Jones, R ^b   Oberg S ^c  

^a AARHUS UNIVERSITY   (Denmark)

^b UNIVERSITY OF EXETER   (United Kingdom)

^c LULEÅ UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

ab initio calculations; Carbon; Ge; Ion channeling; IR spectroscopy; Si1 xGex

Indexed keywords

ABSORPTION SPECTROSCOPY; ANNEALING; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; INFRARED SPECTROSCOPY; ION IMPLANTATION; LATTICE VIBRATIONS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH;

ION CHANNELING; LOCAL DENSITY FUNCTIONAL CLUSTER THEORY; LOCAL VIBRATIONAL MODES;

CARBON;

EID: 3743065913     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Article

References (16)

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