Electrical characteristic of AlGaN/AlN/GaN Schottky diode

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

Volumn 28, Issue SUPPL., 2007, Pages 388-390

  Wang, Xinhua ^a   Wang, Xiaoliang ^a   Xiao, Hongling ^a   Wang, Cuimei ^a   Ran, Junxue ^a   Luo, Weijun ^a   Wang, Baozhu ^a   Feng, Chun ^a   Yang, Cuibai ^a   Ma, Zhiyong ^a   Hu, Guoxin ^a   Zeng, Yiping ^a   Li, Jinmin ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

AlGaN AlN GaN heterostructure; Barrier height; Schottky diode

Indexed keywords

ALUMINUM GALLIUM NITRIDE; CONTACT RESISTANCE; ELECTRIC PROPERTIES; HETEROJUNCTIONS;

ALUMINUM NITRIDE; BARRIER HEIGHT; SCHOTTKY DIODE;

SCHOTTKY BARRIER DIODES;

EID: 37349103049     PISSN: 02534177     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (8)

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