Dicing of gallium-arsenide high performance laser diodes for industrial applications. Part II. Cleavage operation

Journal of Materials Processing Technology

Volumn 198, Issue 1-3, 2008, Pages 105-113

  Wasmer, K ^a   Ballif, C ^b   Pouvreau, C ^a   Schulz, D ^c   Michler, J ^a  

^a SWISS FEDERAL LABORATORIES FOR MATERIALS SCIENCE AND TECHNOLOGY   (Switzerland)

^b UNIVERSITY OF NEUCHÂTEL   (Switzerland)

^c Bookham Switzerland AG   (Switzerland)

Author keywords

Cleavage; Cracks propagation; Dicing; Gallium arsenide (GaAs); Laser diodes; Processing; Semiconductors III V

Indexed keywords

CRACK PROPAGATION; DIAMONDS; INDUSTRIAL APPLICATIONS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR MATERIALS;

ATOMIC FLAT CLEAVED SURFACES; CLEAVAGES; DICING;

SEMICONDUCTOR LASERS;

EID: 37349061754     PISSN: 09240136     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jmatprotec.2007.06.054     Document Type: Article

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